DSAIHSC000104262.pdf by Not Available

Partial File Text TOSHIBA MICROWAVE POWER GaAs FET JS8837A-AS Power GaAs FETs (Chip Form) Features â¢ High power - P idB = 32 dBm at f = 8 GHz â¢ High gain - G1dB = 7 dB at f = 8 GHz â¢ Suitable for C-B
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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