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Partial File Text TOSHIBA MICROWAVE POWER GaAs FET TPM2626-30 High Power GaAs FETs (L, S-Band) Features â¢ High power - P idB = 44.5 dBm at 2.6 GHz â¢ High gain - G-idB = 11.5 dB at 2.6 GHz â¢ Partially
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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