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    DSAIH00011754.pdf by Alliance Semiconductor

    • AS4C256K16E0 ® 5V 256K×16 CMOS DRAM (EDO) Features • Organization: 262,144 words × 16 bits • High speed - 30/35/50 ns RAS access time - 16/18/25 ns column address access time - 7/10/1
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