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Partial File Text TOSHIBA MICROWAVE POWER GaAs FET TIM6472-4 Internally Matched Power GaAs FETs (C-Band) Features â¢H ig h power ' p idB = 36.0 dBm at 6.4 GHz to 7.2 GHz â¢ High gain - G1dB = 8.5 dB at
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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