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Partial File Text TOSHIBA MICROWAVE POWER GaAs FET TIM5964-8A Internally Matched Power GaAs FETs (C-Band) Features â¢ High power - P-idB = 39.5 dBm at 5.9 GHz to 6.4 GHz â¢ High gain - GldB = 8.0 dB at 5.
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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