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Partial File Text TOSHIBA TIM5964-35SLA MICROWAVE POWER GaAs FET PRELIMINARY Features â¢ Low intermodulation distortion - IM3 = -45 dBc at Po = 35.0 dBm â¢ High power - P1dB = 45.5 dBm at 5.9 GHz to 6.4 GHz
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