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Partial File Text TOSHIBA TIM5359-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (C-Band) Features â¢ High power - P-idB = 39 dBm at 5.3 GHz to 5.9 GHz â¢ High gain - G idB = 8.5 dB at 5.3 GH
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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