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Partial File Text TOSHIBA MICROWAVE POWER GaAs FET TIM4951-16 Internally Matched Power GaAs FETs (C-Band) Features â¢ High power - P1dB = 42.5 dBm at 4.9 GHz to 5.1 GHz â¢ High gain - G-idB = 9.0 dB at 4.
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