DSAIHSC000104815.pdf by Not Available

Partial File Text TOSHIBA TIM8596-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features â¢ High power - P-|dB = 39.5 dBm at 8.5 GHz to 9.6 GHz â¢ High gain - G1dB = 6.0 dB at 8
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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