This site uses third-party website tracking technologies to provide and continually improve our services, and to display advertisements according to users' interests. I agree and may revoke or change my consent at any time with effect for the future.
TOSHIBA
TIM8596-8
MICROWAVE POWER GaAs FET
Internally Matched Power GaAs FETs (X, Ku-Band)
Features
⢠High power
- P-|dB = 39.5 dBm at 8.5 GHz to 9.6 GHz
⢠High gain
- G1dB = 6.0 dB at 8
