DSAIHSC000104830.pdf by Not Available

Partial File Text TOSHIBA MICROWAVE POWER GaAs FET TIM7179-8SL Features â¢ Low intermodulation distortion - I M 3 = -4 5 dB c a t Po = 2 8 .5 dBm , - Single carrier level â¢ High pow er - P 1dB = 3 9 .5 d
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