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    DSAZIHA100024182.pdf by American Microsemiconductor

    • 2N2779 Transistors Si NPN Power BJT Military/High-RelN V(BR)CEO (V)250ö V(BR)CBO (V)250 I(C) Max. (A)30 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)175# I(CBO) Max. (A)15m÷
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