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    DSAZIHA100024549.pdf by American Microsemiconductor

    • 2N6325 Transistors Si NPN Power BJT Military/High-RelN V(BR)CEO (V)300 V(BR)CBO (V)400 I(C) Max. (A)30 Absolute Max. Power Diss. (W)200# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)5.0m°
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