DSA0076150.pdf by Hitachi Semiconductor

Partial File Text 2SK2978 Silicon N Channel MOS FET High Speed Power Switching ADE-208-659C (Z) 4th. Edition Jul. 1998 Features · Low on-resistance R DS(on) = 0.09 typ. (VGS = 4 V, I D = 1.5 A) · Low drive c
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