DSAUD0057877.pdf by Kyosemi

Partial File Text Si Phototransistor KPT081M31 KPT081M31 Features 3.8±0.2 · NPN phototransistor · Transparent epoxy potting · Low leak current 3.0±0.2 24MIN 1.5MAX 5.3±0.5 · Optical switches
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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KPT08 phototransistor peak wave sensitivity 600 nm

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