DSA0076265.pdf by Hitachi Semiconductor

Partial File Text 2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier ADE-208-1367 (Z) 1st. Edition Mar. 2001 Features · High power output, High gain, High efficiency PG = 12.2dB, Pout = 30.2dBm, D = 45 %mi
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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2SK2596 ADE-208-1367