DSA0076397.pdf by Hitachi Semiconductor

Partial File Text H5N5006FM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1112 (Z) 1st. Edition Mar. 2001 Features · · · · · Low on-resistance: R DS(on) = 2.5 typ. Low leakage current: I
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
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