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    DSAZIHA100025301.pdf by American Microsemiconductor

    • BD609 Transistors Si NPN Power BJT Military/High-RelN V(BR)CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)10 Absolute Max. Power Diss. (W)90 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0m @V(CB
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