DSA0076723.pdf by Toshiba

Partial File Text TOSHIBA MICROWAVE POWER GaAs FET TPM2323-30 High Power GaAs FETs (L, S-Band) Features · High power - P1dB = 44.5 dBm at 2.3 GHz · High gain - G1dB = 11.5 dB at 2.3 GHz · Partially matched
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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