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    DSAZIHA100025386.pdf by American Microsemiconductor

    • BU406F Transistors Si NPN Power BJT Military/High-RelN V(BR)CEO (V)200 V(BR)CBO (V)400 I(C) Max. (A)7.0 Absolute Max. Power Diss. (W)18 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100u×
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