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Partial File Text Insulated Gate Bipolar Transistors (IGBTs) Milestones in IGBT Technology In 1986, Toshiba started the production of its 1st Generation 1000V IGBTs. With the introduction of Toshiba's 2nd Generation i
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2-109B4A 2-109C1A 2-33D1A 2-94B1A 2-95A1A 2109B 2nd Generation of 1200V IGBT Modules 3rd Generation of 1200V IGBT circuit 3rd Generation of 1200V IGBT Modules GT50J101 GT50Q101 GT60J101 igbt toshiba mg inverter circuit using IGBT TOSHIBA module MG100J2YS40 MG100J2YS45 MG100J6ES40 mg100j6es5 MG100Q2YS1 mg100q2ys9 mg150j2 MG150J2YS40 MG150J2YS45 MG150Q2YS1 MG150Q2YS11 MG150Q2YS9 MG150Q2YS91 mg200j2ys mg200j2ys40 MG200J2YS45 MG200Q1US11 MG200Q2YS1 MG200Q2YS11 MG200Q2YS9 MG200Q2YS91 MG25Q2YS9 MG25Q2YS91 MG25Q6ES MG300J2YS40 igbt MG300Q1US mg300q1us41 MG300Q2YS40 MG400J2YS40 MG400Q1US11 MG400Q1US21 MG400Q1US42 MG500Q1US2 MG500Q1US21 mg50j2ys40 MG50J2YS45 MG50J6ES40 MG50Q2YS91 MG50Q6ES MG50Q6ES1 MG75J2YS40 MG75J2YS45 MG75J6ES40 mg75j6es50 MG75Q2YS11 MIG toshiba MIG150J201H S5979 s5j14 s5j17 S5J17M Toshiba Diode S5979 toshiba mg75j2ys40