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DSA00490818.pdf
by Toshiba
Partial File Text
GT20J101 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT Preliminary GT20J101 High Power Switching Applications Unit: mm · The 3rd Generation · Enhancement-Mode
Datasheet Type
Original
RoHS
No
Pb Free
No
Lifecycle
Obsolete
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GT20J101
GT20J301
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