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    DSA00325210.pdf by Infineon Technologies

    • IPB200N15N3 G IPD200N15N3 G IPI200N15N3 G IPP200N15N3 G OptiMOS®3 Power-Transistor Features · N-channel, normal level · Excellent gate charge x R DS(on) product (FOM) · Very low on-resistance R DS
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    200n15n IPD200N15N3 IPP200N15N3 G
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