DASF001511.pdf by Toshiba

Partial File Text MICROWAVE POWER GaAs FET TIM6472-4UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES HIGH POWER P1dB=36.5dBm at 6.4GHz to 7.2GHz HIGH GAIN G1dB= 9.5dB at 6.4GHz to 7.2GHz BROAD BAND I
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
Price & Stock
Powered by Findchips

DASF001511.pdf preview

Download Datasheet

User Tagged Keywords