This site uses third-party website tracking technologies to provide and continually improve our services, and to display advertisements according to users' interests. I agree and may revoke or change my consent at any time with effect for the future.
1SV274
C A T V T U N IN G .
SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE
· · · ·
High Capacitance Ratio : C 2 V / C 25 V = 12.5 (Typ.) Low Series Resistance : rs = 0.6f2 (Typ.) E
