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    • SILICON N CHANNEL MOS TYPE GT15G101 Unit in mm 1 0± 0.3 0 3 .2 ± 0 .2 2 .7 ± 0 .2 STROBE FALSH APPLICATIONS . High Input Impedance . Low Saturation Voltage : VcE(sat)~8V(Max.)(Ic~170A
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