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DSA2IH00202965.pdf
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SILICON PNP EPITAXIAL TY PE (PCT PRO CESS) HIGH CURRENT SW ITCH IN G APPLICATIONS. U n it in mm Low Collector Saturation Voltage : VCE (sat)= -0.4V (Max.) (Ic = -3 A , I b = - 0.15A) High Spe
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