DSA00361143.pdf
by Toshiba
- 1SS385 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS385 High Speed Switching Unit: mm Low forward voltage: VF (2) = 0.23V (typ.) @IF = 5mA Small package Maximum Ratings (Ta
- Original
- Yes
- No
- Active
-
Powered by
Findchips
