Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    Part Img 1PS76SB21 datasheet by NXP Semiconductors

    • 1PS76SB21 - Schottky barrier diodes in small packages - Cd max.: 50@VR=0V pF; Configuration: single ; IF max: 200 mA; IFSM max: 1000 A; IR max: 15@VR=30VA; VFmax: 300@IF=10mA mV; VR max: 40 V
    • Original
    • Yes
    • Yes
    • Transferred
    • EAR99
    • 8541.10.00.70
    • 8541.10.00.70
    • Find it at Findchips.com

    1PS76SB21 datasheet preview

    1PS76SB21 Frequently Asked Questions (FAQs)

    • NXP provides a recommended PCB layout in the application note AN11173, which includes guidelines for thermal vias, copper pours, and component placement to minimize thermal resistance and ensure reliable operation.
    • The input capacitor selection depends on the input voltage, current, and frequency. NXP recommends using a low-ESR capacitor with a value between 1-10 μF, and a voltage rating that matches the input voltage. The application note AN11173 provides more detailed guidance on capacitor selection.
    • The maximum allowed voltage drop across the 1PS76SB21 is 0.5 V. Exceeding this voltage drop may affect the device's performance, reliability, and lifespan. Ensure that the input voltage and output current are within the recommended specifications to maintain a safe operating margin.
    • The 1PS76SB21 is rated for operation up to 150°C junction temperature. However, the device's performance and reliability may degrade at high temperatures. NXP recommends derating the device's output current and voltage according to the thermal derating curve provided in the datasheet.
    • To ensure EMC, follow proper PCB design and layout practices, such as using a solid ground plane, minimizing loop areas, and using shielding and filtering components as needed. NXP provides EMC guidelines in the application note AN11173 and the datasheet.
    Price & Stock Powered by Findchips Logo
    Supplyframe Tracking Pixel