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    Part Img 1PS70SB40,115 datasheet by NXP Semiconductors

    • General-purpose Schottky diodes - C<sub>d</sub> max.: 5@VR=0V pF; Configuration: single ; I<sub>F</sub> max: 120 mA; I<sub>FSM</sub> max: 200 A; I<sub>R</sub> max: 1@VR=30VA; V<sub>F</sub>max: 500@IF=10mA mV; V<sub>R</sub> max: 40 V; Package: SOT323 (SC-70); Container: Tape reel smd
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • 8541.10.00.70
    • 8541.10.00.70
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    1PS70SB40,115 datasheet preview

    1PS70SB40,115 Frequently Asked Questions (FAQs)

    • NXP provides a recommended PCB layout in the application note AN11555, which includes guidelines for thermal vias, copper pours, and component placement to minimize thermal resistance and ensure reliable operation.
    • The input capacitor selection depends on the input voltage, current, and frequency. NXP recommends using a low-ESR capacitor with a value between 4.7uF to 10uF, and a voltage rating of at least 1.5 times the input voltage. Refer to the application note AN11555 for more details.
    • The maximum allowed voltage drop across the 1PS70SB40,115 is 0.5V. Exceeding this voltage drop may affect the device's performance, reliability, and lifespan.
    • Proper biasing is critical for the device's performance. Ensure that the input voltage is within the recommended range, and the enable pin (EN) is properly biased to the recommended voltage level (typically VCC or 3.3V). Refer to the datasheet for specific biasing requirements.
    • Thermal design considerations include providing adequate heat sinking, using thermal vias, and ensuring good airflow around the device. The device's thermal resistance (RthJA) is 30°C/W, and the maximum junction temperature (Tj) is 150°C. Refer to the application note AN11555 for more thermal design guidelines.
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