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DSAZIHA100096688.pdf
by Fairchild Semiconductor
Partial File Text
FDMC4435BZ P-Channel Power Trench® MOSFET -30 V, -18 A, 20 mΩ Features General Description Max rDS(on) = 20 mΩ at VGS = -10 V, ID = -8.5 A This P-Channel MOSFET is produced using Fairch
Datasheet Type
Original
RoHS
Unknown
Pb Free
Unknown
Lifecycle
Unknown
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