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    DSAEDA000115505.pdf by International Rectifier

    • IRFH8316PbF HEXFET® Power MOSFET VDS 30 ± 20 Vgs max RDS(on) max V V 2.95 (@VGS = 10V) (@VGS = 4.5V) 4.30 Qg typ m 30.0 ID 50 (@Tc(Bottom) = 25°C) nC
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