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DSAEDA000115691.pdf
by International Rectifier
Partial File Text
PD - 95595 IRFIZ46NPbF l l l l l l HEXFET® Power MOSFET Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS  Sink to Lead Creepage Dist. = 4.8mm Fully
Datasheet Type
Original
RoHS
Unknown
Pb Free
Unknown
Lifecycle
Unknown
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