DSA00250067.pdf by STMicroelectronics

Partial File Text STGB18N40LZ STGD18N40LZ EAS 180 mJ - 400 V - internally clamped IGBT Features AEC Q101 compliant 180 mJ of avalanche energy @ TC = 150 °C, L = 3 mH ESD gate-emitter protection
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
Price & Stock
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GB18N40 gb18n40l GB18N40LZ GD18N GD18N40 GD18N40LZ SCHEMATIC IGNITION iGBT STGB18N40LZ STGB18N40LZ-1 STGB18N40LZT4 STGD18N40LZ STGD18N40LZ-1 STGD18N40LZT4