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DSAEDA000117210.pdf
by International Rectifier
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IRG7IC23FDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V C IC = 9.0A, TC = 100°C tsc > 3μs, Tjmax = 150°C G VCE(on) typ. = 1.60V @ IC = 18A C
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