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DSAIH000181160.pdf
by IXYS
Partial File Text
Preliminary Technical Information IXTF200N10T Trench Gate Power MOSFET VDSS ID25 = 100 V = 103 A ⤠6.0 m ⦠RDS(on) (Electrically Isolated Back Surface) N-Channel Enhanceme
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RoHS
Yes
Pb Free
Yes
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Transferred
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