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    DSAIH000181291.pdf by IXYS

    • Preliminary Technical Information Trench Gate Power MOSFET IXTF230N085T VDSS ID25 = 85 V = 125 A ≤ 4.9 m Ω RDS(on) (Electrically Isolated Back Surface) N-Channel Enhanceme
    • Original
    • Yes
    • Yes
    • Obsolete
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    DSAIH000181291.pdf preview
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