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    DSAIH000181293.pdf by IXYS

    • Preliminary Technical Information Trench Gate Power MOSFET IXTF280N055T VDSS ID25 = 55 V = 150 A ≤ 3.5 m Ω RDS(on) (Electrically Isolated Back Surface) N-Channel Enhanceme
    • Original
    • Yes
    • Yes
    • Obsolete
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    DSAIH000181293.pdf preview
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