DSA2IH00205888.pdf by Not Available

Partial File Text TOSHIBA MICROWAVE SEMICONDUCTORS TECHNICAL DATA FEATURES: H IG H POWER P1dB=28dBm C H IP FORM MICROWAVE POWER GaAs FET JS9P05-AS IHIGH GAIN f = 38GHz GldB= 6. 5dB f =38GHz RF PERF
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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