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Partial File Text TOSHIBA MICROWAVE POWER GaAs FET Power GaAs FETs (Packaged) Features · High power - P idB = 24 dBm at f = 8 GHz · High gain - G idB = 8 dB at f = 8 GHz · Suitable for C-Band am plifier · Ion implan
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Obsolete

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