This site uses third-party website tracking technologies to provide and continually improve our services, and to display advertisements according to users' interests. I agree and may revoke or change my consent at any time with effect for the future.
TOSHIBA
MICROWAVE POWER GaAs FET Power GaAs FETs (Chip Form)
Features
· High power - P idB = 24 dBm a t f = 15 GHz · High gain - G 1dB = 8 dB a t f = 1 5 G H z · Suitable for Ku-Band am plifier · I