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Partial File Text TOSHIBA MICROWAVE POWER GaAs FET Power GaAs FETs (Chip Form) Features · High power - P idB = 28 dBm at f = 15 GHz · High gain - G 1dB = 7 d B at f = 1 5 G H z · Suitable for Ku-Band am plifier · Io
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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