DSA2IH00206623.pdf by Not Available

Partial File Text TOSHIBA MICROWAVE POWER GaAs FET High Efficiency and Low Distortion Internally Matched Power GaAs FETs (C-Band) Features · Low interm odulation distortion - IM 3 = -4 5 d B c at Po = 2 8 .5 d B m ,
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

DSA2IH00206623.pdf preview Download Datasheet