DSAIH00026755.pdf by Not Available

Partial File Text GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER LOW CRSS: 0.02 pF (TYP) HIGH GPS: 20 dB (TYP) AT 900 MHz LOW NF: 1.1 dB TYP AT 900 MHz Lgi = 1.0 |im, LG2
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NE25139U NEC Ga FET marking A