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Partial File Text TOSHIBA MICROWAVE POWER GaAs FET High Power GaAs FETs (L, S-Band) Features · High power · High gain " P-idB = 42.0 1.8 G H Z TPM1818-14 dBm at · Partially matched type · Hermetically seal
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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