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Partial File Text TOSHIBA MICROWAVE POWER GaAs FET High Power GaAs FETs (L, S-Band) Features · High power P-idB = 44.5 dBm at 1.8 GHz · High gain - G idB = 12 dB at 1.8 GHz · Partially matched type · Hermetically se
Datasheet Type Scan
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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