DSA2IH00207003.pdf by Not Available

Partial File Text TOSHIBA MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band) Features · High power - P1dB = 37.5 dBm at 10.7 GHz to 11.7 GHz · High gain - G-|dB = 7.0 dB at 10.7 GHz to 11.7 GHz
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