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TOSHIBA
MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs (X, Ku-Band)
Features
· High power - P1dB =39.5 dBm at 14.0 GHz to14.5 GHz · High gain - G 1dB = 5.0 dB at 14.0 GHz to 14.5 GHz ·