DSA00152909.pdf by Cree

Partial File Text CGH21120F 120 W, 1800-2300 MHz, GaN HEMT for WCDMA, LTE, WiMAX Cree's CGH21120F is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
Price & Stock
Powered by Findchips

DSA00152909.pdf preview

Download Datasheet

User Tagged Keywords