DSA00152933.pdf by Cree

Partial File Text CGH55030F1 / CGH55030P1 30 W, 5500-5800 MHz, 28V, GaN HEMT for WiMAX Cree's CGH55030F1/CGH55030P1 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high e
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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